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× |
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Materials
-
Material:
Silicon
-
Diameter:
[110] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-10
-
Thickness:
3"
-
Surface:
360
-
Grade:
SEMI Prime, 2Flats (PF at ±0.5°, SF at 109.5° CW from PF),Ultra-Low TTV<1µm, Empak cst
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Delivery Time:
15-30 days
|
$200.00 |
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$200.00 |
|
× |
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Materials
-
Material:
Silicon
-
Type:
P
-
Dopant:
As
-
Growth Method:
CZ
-
Orientations:
(100.00)
-
Resistivity:
.001-.005
-
Thickness:
375-425µm
-
Surface:
P/P
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$500.00 |
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$500.00 |
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× |
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Materials
-
Material:
Silicon
-
Diameter:
[111] ±2°
-
Type:
C/C
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>10,000
-
Thickness:
0.39"
-
Surface:
27,870 ±100
-
Grade:
Single Crystal Silicon Rod, 9.9mmØ × 27.9±0.1mm,NO Flats
-
Delivery Time:
15-30 days
|
$90.00 |
|
$90.00 |
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