× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
0.05-0.15
-
Thickness:
2"
-
Surface:
5,000
-
Grade:
SEMI Test, 2Flats, Individual cst, Groups of 2 wafers, With Edge Chips
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-20
-
Thickness:
4"
-
Surface:
360
-
Grade:
SEMI Prime, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
100mm
-
Type:
P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
.001-.005
-
Thickness:
500-550µm
-
Surface:
P/E
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
C/C
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
5-35 {25-30}
-
Thickness:
8"
-
Surface:
890 ±15
-
Grade:
SEMI notch, Empak cst
-
Delivery Time:
15-30 days
|
$60.00 |
|
$60.00 |
× |
|
Materials
-
Material:
Germanium
-
Diameter:
50.8mm
-
Type:
Undoped
-
Dopant:
CZ
-
Growth Method:
-100
-
Orientations:
>30
-
Resistivity:
300-350 pm
-
Thickness:
P/P
-
Surface:
EPI
-
Delivery Time:
15-30 days
|
$250.00 |
|
$250.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
100mm
-
Type:
P
-
Dopant:
Phos
-
Growth Method:
FZ
-
Orientations:
(100.00)
-
Resistivity:
>3000
-
Thickness:
500-550µm
-
Surface:
P/E
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
50.8mm
-
Type:
P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
1-20
-
Thickness:
80-100µm
-
Surface:
P/P
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$60.00 |
|
$60.00 |
|