× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
10-20 {11.5-17.0}
-
Thickness:
6"
-
Surface:
381
-
Grade:
SEMI Prime, 2Flats, TTV<7µm, Bow/Warp<20µm, Empak cst
-
Delivery Time:
15-30 days
|
$110.00 |
|
$110.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-100
-
Thickness:
40µm
-
Surface:
250
-
Grade:
SEMI Prime, 1Flat, Individual cst, in Pack of 5 wafers
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|