× |
|
Materials
-
Material:
Silicon
-
Diameter:
[110] ±0.2°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
30-60 {33-41}
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 2Flats (PF at ±0.2°, SF at CW 109.5° from PF),TTV<3µm, Bow<15m, Warp<30µm,Empa
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-100
-
Thickness:
12"
-
Surface:
775
-
Grade:
SEMI Prime Notch, TTV<5µm, Bow<10µm, Warp<30µm, Empak cst
-
Delivery Time:
15-30 days
|
$140.00 |
|
$140.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ>5,000
-
Thickness:
3"
-
Surface:
360
-
Grade:
SEMI Prime, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$130.00 |
|
$130.00 |
|