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Materials
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Material:
Silicon
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Diameter:
100mm
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Type:
P
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
(111)
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Resistivity:
1-20
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Thickness:
450-500µm
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Surface:
P/P
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Grade:
PRIME
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Delivery Time:
15-30 days
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$100.00 |
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$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±0.3°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
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Orientations:
Intrinsic Si:-
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Resistivity:
FZ>20,000
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Thickness:
4"
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Surface:
4,000
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Grade:
SEMI TEST (Chipped), 1Flat, MCC Lifetime>1,200µs, Individual cst as Group of 2 wafers
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Delivery Time:
15-30 days
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$200.00 |
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$200.00 |
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