× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ1-5 {2.5-3.0}
-
Thickness:
6"
-
Surface:
280
-
Grade:
PV Reference wafers,SEMI Prime, 2Flats {PF at ±1°, SF 135° from PF},Measured MCC Lifetime>18,738µs
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-100
-
Thickness:
12"
-
Surface:
750 ±50
-
Grade:
SEMITEST (TTV<25µm), Notch, Bow/Warp<50µm, Empak cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
5-10
-
Thickness:
2"
-
Surface:
275 ±5
-
Grade:
SEMI Prime, 2Flats, TTV<5µm, hard cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>10,000
-
Thickness:
8"
-
Surface:
725
-
Grade:
SEMI Prime, Notch, MCC Lifetime>1,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$160.00 |
|
$160.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
100mm
-
Type:
P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
1-20
-
Thickness:
500-550µm
-
Surface:
P/E/DTOx
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$40.00 |
|
$40.00 |
|