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Materials
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Material:
Indium Phosphide
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Diameter:
76.2mm
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Type:
P
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Dopant:
Zn
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Growth Method:
VGF
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Orientations:
(100)
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Thickness:
600-650µm
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Surface:
P/E
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Grade:
PRIME
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Delivery Time:
15-30 days
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$200.00 |
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$200.00 |
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Materials
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Material:
Silicon
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Diameter:
[111] ±0.5°
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Type:
P/P
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
Intrinsic Si:-
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Resistivity:
FZ>10,000 {19,410-32,973}
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Thickness:
4"
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Surface:
500 ±10
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Grade:
SEMI Prime, 2Flats, TTV1,000µs, Empak cst
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Delivery Time:
15-30 days
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$80.00 |
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$80.00 |
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