× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100-6°towards[111]] ±0.5°
-
Type:
C/C
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ>3,500
-
Thickness:
6"
-
Surface:
790 ±10
-
Grade:
SEMI, 1Flat (57.5mm), Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
FZ0.25-0.75
-
Thickness:
4"
-
Surface:
150
-
Grade:
SEMI Prime, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[110] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:Sb
-
Resistivity:
0.01-0.02
-
Thickness:
6"
-
Surface:
625
-
Grade:
SEMI Prime, JEIDA Flat (47.5mm) at , Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Germanium
-
Diameter:
50.8mm
-
Type:
P
-
Dopant:
Sb
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
.005-.02
-
Thickness:
350-400µm
-
Surface:
P/E
-
Grade:
EP!
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
5-10
-
Thickness:
4"
-
Surface:
2,000
-
Grade:
SEMI Prime, 1Flat, TTV<5µm, Individual cst, Groups 4 wafers
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
|