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Materials
-
Material:
Silicon
-
Diameter:
[5,5,12] ±0.5°
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Type:
P/E
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
p-type Si:B
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Resistivity:
1-10
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Thickness:
3"
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Surface:
380
-
Grade:
SEMI Prime, One Flat, Empak cst
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Delivery Time:
15-30 days
|
$130.00 |
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$130.00 |
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Materials
-
Material:
Silicon
-
Diameter:
[111-2.5°] ±1°
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Type:
NOP/EON
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
p-type Si:B
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Resistivity:
2-8
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Thickness:
4"
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Surface:
450
-
Grade:
SEMI Prime, 1Flat,Both sides with 2µm SiO2, both sides with 250nm low stress silicon nitride over the oxide, Empak cst
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Delivery Time:
15-30 days
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$150.00 |
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$150.00 |
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