× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/EOx
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:As
-
Resistivity:
0.001-0.005 {0.0036-0.0041}
-
Thickness:
6"
-
Surface:
675 ±15
-
Grade:
SEMI Prime, 1Flat (57.5mm), TTV<5µm, LTO (0.3-0.6)µm thick, in Empak cassettes of 7, 16, 19 wafers
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111-2°towards[110]]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:Sb
-
Resistivity:
FZ0.008-0.015
-
Thickness:
2"
-
Surface:
280
-
Grade:
SEMI Prime, 1Flat, hard cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100-4°towards[110]] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.01-0.02
-
Thickness:
3"
-
Surface:
381
-
Grade:
SEMI Prime, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±0.3°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000
-
Thickness:
4"
-
Surface:
4,000
-
Grade:
SEMI TEST (Chipped), 1Flat, MCC Lifetime>1,200µs, Individual cst as Group of 2 wafers
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±2°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ429-454
-
Thickness:
100.6 ±0.1µm
-
Surface:
10,225 ±25 ?m
-
Grade:
SEMI Prime,NO Flats,Individual csts, Sealed in Pack of 5 wafers
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|