× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>10,000
-
Thickness:
2"
-
Surface:
331 ±1
-
Grade:
Superflat central 1"Ø, SEMI, 1Flat, MCC Lifetime>1,000µs, TTV<1µm, hard cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100-6°towards[111]] ±0.5°
-
Type:
BROKEN
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ>1,000
-
Thickness:
6"
-
Surface:
675
-
Grade:
SEMI notchBROKEN - one piece ~50% of wafers other pieces ~20% of wafer, Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
|