× |
|
Materials
-
Material:
Silicon
-
Diameter:
[110] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
4-6
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 2 Flats at [111], SF 30° CW from PF, Empak cst
-
Delivery Time:
15-30 days
|
$40.00 |
|
$40.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>10,000
-
Thickness:
6"
-
Surface:
675
-
Grade:
SEMI Prime, 1Flat (57.5mm), Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
0.01-0.10
-
Thickness:
2"
-
Surface:
5,000
-
Grade:
SEMI Prime, 2Flats, Individual cst, Group of 3 wafers
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|