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× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100] ±1°
  • Type:

    P/E
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    0.0007-0.0013
  • Thickness:

    4"
  • Surface:

    625
  • Grade:

    SEMI Prime, 1Flat, with LaserMark, Empak cst
  • Delivery Time:

    15-30 days
$50.00
$50.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100] ±1°
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    5-10
  • Thickness:

    4"
  • Surface:

    2,000 ±50
  • Grade:

    SEMI Prime, 1Flat, Individual cst sealed in a group of 2 wafers
  • Delivery Time:

    15-30 days
$80.00
$80.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    C/C
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    4-10
  • Thickness:

    4"
  • Surface:

    25,000 ±50
  • Grade:

    SEMI, 1Flat, TTV<30µm, Bow/Warp<40µm, Individual cst
  • Delivery Time:

    15-30 days
$200.00
$200.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [111] ±0.5°
  • Type:

    P/E
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    n-type Si:P
  • Resistivity:

    >20
  • Thickness:

    2"
  • Surface:

    5,000 ±50
  • Grade:

    Prime,NO Flats, Individual cst, Group of 3 wafers
  • Delivery Time:

    15-30 days
$100.00
$100.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [111-2.5°] ±1°
  • Type:

    NOP/EON
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    2-8
  • Thickness:

    4"
  • Surface:

    450
  • Grade:

    SEMI Prime, 1Flat,Both sides with 2µm SiO2, both sides with 250nm low stress silicon nitride over the oxide, Empak cst
  • Delivery Time:

    15-30 days
$150.00
$150.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    8-12
  • Thickness:

    3"
  • Surface:

    400
  • Grade:

    SEMI Prime, 2Flats,TTV<5µm,Empak cst
  • Delivery Time:

    15-30 days
$130.00
$130.00

Cart totals

Subtotal $710.00
Shipping

Shipping to CA.

Tax $0.00
Total $710.00 USD
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