× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-100
-
Thickness:
2"
-
Surface:
100 ±15
-
Grade:
SEMI Prime, 1Flat, hard cst, Packs of 5 wafers
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-10
-
Thickness:
4"
-
Surface:
20,000 ±100
-
Grade:
SEMITEST {Polishing Defects}, NO Flats, in Unsealed Individual cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ20,000-70,000
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 1Flat, TTV1,000µs, Back side Acid-Etched, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
|