× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.0007-0.0013
-
Thickness:
4"
-
Surface:
625
-
Grade:
SEMI Prime, 1Flat, with LaserMark, Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
5-10
-
Thickness:
4"
-
Surface:
2,000 ±50
-
Grade:
SEMI Prime, 1Flat, Individual cst sealed in a group of 2 wafers
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
C/C
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
4-10
-
Thickness:
4"
-
Surface:
25,000 ±50
-
Grade:
SEMI, 1Flat, TTV<30µm, Bow/Warp<40µm, Individual cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|