× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
NP/PN
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.001-1.000
-
Thickness:
2"
-
Surface:
280
-
Grade:
SEMI Prime, 2Flats, Both-sides-polished with LPCVD Si3N4 200±10nm thick on both sides, hard cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Germanium
-
Diameter:
100mm
-
Dopant:
Undoped
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
>30
-
Thickness:
500-550µm
-
Surface:
P/E
-
Grade:
EPI
-
Delivery Time:
15-30 days
|
$250.00 |
|
$250.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100-28°towards[110]] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-100
-
Thickness:
6"
-
Surface:
700
-
Grade:
SEMI Prime,Notch, TTV<2µm, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 1Flat, MCC Lifetime>1,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
|