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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
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Resistivity:
1-30
-
Thickness:
4"
-
Surface:
475
-
Grade:
SEMI Prime, 1Flat,TTV<1µm,Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
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Materials
-
Material:
Silicon
-
Diameter:
76.2mm
-
Type:
P
-
Dopant:
Phos
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Growth Method:
CZ
-
Orientations:
(111)
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Resistivity:
1-100
-
Thickness:
4900-5100µm
-
Surface:
P/E
-
Grade:
PRIME
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Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000
-
Thickness:
4"
-
Surface:
500
-
Grade:
SEMI Prime, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ>9,500
-
Thickness:
6"
-
Surface:
950 ±50
-
Grade:
SEMI Prime, 1Flat (57.5mm),MCC Lifetime>6,934µs,Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
PlyAP/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:As
-
Resistivity:
0.001-0.005
-
Thickness:
4"
-
Surface:
525
-
Grade:
With layer of Al2O3, ~0.1µm or ~0.05µm thick, Wafers with a matrix of Polycrystalline Silicon dots, Empak cst,[More Info]
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
|