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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.5-10.0
-
Thickness:
4"
-
Surface:
890 ±15
-
Grade:
SEMITEST (Scratches), ~100 small holes through wafer in pattern, 1Flat, TTV<8µm, Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[331] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.001-0.002
-
Thickness:
4"
-
Surface:
475
-
Grade:
Prime, 1Flat, TTV<5µm, Bow/Warp<10µm, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|