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× Placeholder Materials
  • Material:

    Silicon

  • Diameter:

    [100]

  • Type:

    P/P

  • Dopant:

    Boron

  • Growth Method:

    CZ

  • Orientations:

    Intrinsic Si:-

  • Resistivity:

    FZ>20,000 {24,940-308,900}

  • Thickness:

    4"

  • Surface:

    500

  • Grade:

    SEMI Prime, 1Flat, TTV1,000µs, Empak cst

  • Delivery Time:

    15-30 days

$80.00
$80.00
× Placeholder Materials
  • Material:

    Silicon

  • Diameter:

    [100]

  • Type:

    P/P

  • Dopant:

    Boron

  • Growth Method:

    CZ

  • Orientations:

    p-type Si:B

  • Resistivity:

    5-10

  • Thickness:

    4"

  • Surface:

    300

  • Grade:

    SEMI Prime, 2Flats, Empak cst

  • Delivery Time:

    15-30 days

$80.00
$80.00
× Placeholder Materials
  • Material:

    Silicon

  • Diameter:

    Poly.

  • Type:

    C/C

  • Dopant:

    Boron

  • Growth Method:

    CZ

  • Orientations:

    p-typeSi:Ga

  • Resistivity:

    0.024-0.036

  • Thickness:

    2"

  • Grade:

    Gallium dopant Concentrate (each with measured Gallium content)

  • Delivery Time:

    15-30 days

$100.00
$100.00
× Placeholder Materials
  • Material:

    Silicon

  • Diameter:

    [221] ±0.5°

  • Type:

    P/P

  • Dopant:

    Boron

  • Growth Method:

    CZ

  • Orientations:

    n-type Si:P

  • Resistivity:

    FZ>100

  • Thickness:

    4"

  • Surface:

    762

  • Grade:

    Prime, 1Flat, Empak cst

  • Delivery Time:

    15-30 days

$80.00
$80.00
× Placeholder Materials
  • Material:

    Silicon

  • Diameter:

    [100]

  • Type:

    P/P

  • Dopant:

    Boron

  • Growth Method:

    CZ

  • Orientations:

    p-type Si:B

  • Resistivity:

    1-30

  • Thickness:

    4"

  • Surface:

    381

  • Grade:

    SEMI Prime, 2Flats,TTV<5µm, Bow<10µm, Warp<30µm,Empak cst

  • Delivery Time:

    15-30 days

$80.00
$80.00
× Placeholder Materials
  • Material:

    Silicon

  • Diameter:

    [100]

  • Type:

    P/E

  • Dopant:

    Boron

  • Growth Method:

    CZ

  • Orientations:

    p-type Si:B

  • Resistivity:

    0.001-0.007

  • Thickness:

    4"

  • Surface:

    2,000

  • Grade:

    SEMI Prime, 2Flats, Individual cst, Sold as Group of 9 wafers

  • Delivery Time:

    15-30 days

$80.00
$80.00
× Placeholder Materials
  • Material:

    Silicon

  • Diameter:

    [100]

  • Type:

    P/E

  • Dopant:

    Boron

  • Growth Method:

    CZ

  • Orientations:

    Intrinsic Si:-

  • Resistivity:

    FZ>10,000

  • Thickness:

    2"

  • Surface:

    500 ±10

  • Grade:

    SEMI Prime, 1Flat, MCC Lifetime>1,000µs, TTV<5µm, hard cst

  • Delivery Time:

    15-30 days

$100.00
$100.00
× Placeholder Materials
  • Material:

    Silicon

  • Diameter:

    [100]

  • Type:

    P/E

  • Dopant:

    Boron

  • Growth Method:

    CZ

  • Orientations:

    p-type Si:B

  • Resistivity:

    5-10

  • Thickness:

    4"

  • Surface:

    380

  • Grade:

    SEMI Prime, 1Flat,Back-side slightly darker than normal, in hard cst

  • Delivery Time:

    15-30 days

$50.00
$50.00
× Placeholder Materials
  • Material:

    Silicon

  • Diameter:

    [533] ±0.3°

  • Type:

    P/P

  • Dopant:

    Boron

  • Growth Method:

    CZ

  • Orientations:

    Intrinsic Si:-

  • Resistivity:

    FZ>1,000

  • Thickness:

    4"

  • Surface:

    300

  • Grade:

    SEMI Prime, 1Flat, TTV1,500µs, Empak cst

  • Delivery Time:

    15-30 days

$200.00
$200.00

Cart totals

Subtotal $850.00
Shipping

Shipping to CA.

Tax $0.00
Total $850.00 USD