× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
SiNOxP/EOxSiN
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-10
-
Thickness:
3"
-
Surface:
380
-
Grade:
SEMI Prime, 1Flat, Wet Thermal Oxide 5µm ±5% thick over polished & etched sides, LPCVD Low Stress Silicon Nitride 350nm ±5% thick over Oxide on both sides, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[211] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ25-75
-
Thickness:
3"
-
Surface:
508
-
Grade:
Prime, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[211] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ25-75
-
Thickness:
3"
-
Surface:
1,016
-
Grade:
Prime, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
C/C
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ7,000-8,000 {7,025-7,856}
-
Thickness:
6"
-
Surface:
825
-
Grade:
SEMI, 1Flat,MCC Lifetime=7,562µs,in Unsealed Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±1.0°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:Sb
-
Resistivity:
0.005-0.020 {0.010-0.020}
-
Thickness:
6"
-
Surface:
315 ±15
-
Grade:
Prime, 1Flat {42.5mm long, 15±1° CW from }, Back-side Acid etched, Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
|