× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-20
-
Thickness:
1"
-
Surface:
1,500
-
Grade:
Prime,NO Flats, Individual cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
125mm
-
Type:
P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
1-50
-
Thickness:
575-625µm
-
Surface:
P/E/DTOx
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Gallium Arsenide
-
Diameter:
150mm
-
Type:
Si
-
Dopant:
Undoped
-
Growth Method:
VGF
-
Orientations:
(100)
-
Resistivity:
>1E7
-
Thickness:
610-660µm
-
Surface:
P/P
-
Grade:
EPI
-
Delivery Time:
15-30 days
|
$250.00 |
|
$250.00 |
|