× |
|
Materials
-
Material:
Silicon
-
Diameter:
[110]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:Sb
-
Resistivity:
0.005-0.020
-
Thickness:
2"
-
Surface:
375
-
Grade:
SEMI Prime, 1Flat at , hard cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100-4°towards[110]] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.1-1.5 {0.52-0.63}
-
Thickness:
4"
-
Surface:
300
-
Grade:
SEMI Prime, 2Flats, TTV<5µm, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
5-35
-
Thickness:
6"
-
Surface:
725
-
Grade:
SEMI Prime, 1 JEIDA Flat(47.5mm),TTV<5µm, TIR<1µm, Bow<10µm, Warp<20µm, with Laser Mark,Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
C/C
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ>5,000
-
Thickness:
4"
-
Surface:
425
-
Grade:
SEMI, 2Flats(SF at 90°{not at 180°}), MCC Lifetime>980µs, Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
76.2mm
-
Type:
P
-
Dopant:
Phos
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
1-50
-
Thickness:
2900-3100µm
-
Surface:
P/E
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|