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× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    PlyAP/E
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    n-type Si:As
  • Resistivity:

    0.001-0.005
  • Thickness:

    4"
  • Surface:

    525
  • Grade:

    With layer of Al2O3, ~0.1µm or ~0.05µm thick, Wafers with a matrix of Polycrystalline Silicon dots, Empak cst,[More Info]
  • Delivery Time:

    15-30 days
$80.00
$80.00
× Placeholder Materials
  • Material:

    Indium Phosphide
  • Diameter:

    76.2mm
  • Type:

    P
  • Dopant:

    Zn
  • Growth Method:

    VGF
  • Orientations:

    (100)
  • Thickness:

    600-650µm
  • Surface:

    P/E
  • Grade:

    PRIME
  • Delivery Time:

    15-30 days
$200.00
$200.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    76.2mm
  • Type:

    P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    (100)
  • Resistivity:

    1-10
  • Thickness:

    825-875µm
  • Surface:

    P/P
  • Grade:

    PRIME
  • Delivery Time:

    15-30 days
$50.00
$50.00

Cart totals

Subtotal $330.00
Shipping

Shipping to CA.

Tax $0.00
Total $330.00 USD
Proceed to checkout