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Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.02°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-10
-
Thickness:
3"
-
Surface:
350
-
Grade:
SEMI Prime, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$130.00 |
|
$130.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[510]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
FZ2,879-3,258
-
Thickness:
2"
-
Surface:
1,550
-
Grade:
Zero Diffraction Plate, NO Flats, Individual cst, Sold in packs of 6 and 3 wafers
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|