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Materials
-
Material:
Silicon
-
Diameter:
25.4mm
-
Type:
P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
1-20
-
Thickness:
10-30µm
-
Surface:
P/P
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[211] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ25-75
-
Thickness:
3"
-
Surface:
1,016
-
Grade:
SEMITEST, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.2°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>10,000
-
Thickness:
2"
-
Surface:
300 ±15
-
Grade:
SEMI Prime, 1Flat,2 extra scratched wafers at no extra charge,hard cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
|