× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
BROKEN
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ4,000-8,000
-
Thickness:
3"
-
Surface:
380
-
Grade:
Broken P/E wafer, 1Flat, Soft cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[221] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>10,000
-
Thickness:
2"
-
Surface:
500
-
Grade:
SEMI, 1Flat, MCC Lifetime>1,000µs,TTV<1µm,hard cst
-
Delivery Time:
15-30 days
|
$120.00 |
|
$120.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[110] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:As
-
Resistivity:
0.001-0.005
-
Thickness:
4"
-
Surface:
275
-
Grade:
SEMITEST (Haze, scratches, TTV<15µm),PF at [111]±0.5°, SF at [111] CW 70.5°±5° from PF, Empak cst
-
Delivery Time:
15-30 days
|
$40.00 |
|
$40.00 |
|