× |
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Materials
-
Material:
Silicon
-
Diameter:
[111-4°] ±0.5°
-
Type:
P/EOx
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:As
-
Resistivity:
0.001-0.005
-
Thickness:
4"
-
Surface:
325
-
Grade:
SEMI Prime, 2Flats,Back-side Sand-blasted with LTO seal,in Empak cassettes (7 + 7 wafers)
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
Poly.
-
Type:
C/C
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-typeSi:Ga
-
Resistivity:
0.024-0.036
-
Thickness:
2"
-
Grade:
Gallium dopant Concentrate (each with measured Gallium content)
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
5-10
-
Thickness:
4"
-
Surface:
380
-
Grade:
SEMI Prime, 1Flat,Back-side slightly darker than normal, in hard cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
|