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× Placeholder Materials
  • Material:

    Indium Phosphide

  • Diameter:

    76.2mm

  • Type:

    Si

  • Dopant:

    Fe

  • Growth Method:

    VGF

  • Orientations:

    (100)

  • Resistivity:

    5000000

  • Thickness:

    600-650µm

  • Surface:

    P/E

  • Grade:

    PRIME

  • Delivery Time:

    15-30 days

$250.00
$250.00
× Placeholder Materials
  • Material:

    Silicon

  • Diameter:

    [100]

  • Type:

    P/P

  • Dopant:

    Boron

  • Growth Method:

    CZ

  • Orientations:

    n-type Si:P

  • Resistivity:

    1-100

  • Thickness:

    6"

  • Surface:

    3,000

  • Grade:

    SEMI Prime, 1Flat (57.5mm), Individual cst, TTV<5µm, Sold in packs of 5 wafers

  • Delivery Time:

    15-30 days

$200.00
$200.00
× Placeholder Materials
  • Material:

    Silicon

  • Diameter:

    [100]

  • Type:

    P/P

  • Dopant:

    Boron

  • Growth Method:

    CZ

  • Orientations:

    n-type Si:P

  • Resistivity:

    1-10

  • Thickness:

    4"

  • Surface:

    275

  • Grade:

    SEMI Prime, 1Flat,TTV<3µm,LaserMark, Empak cst

  • Delivery Time:

    15-30 days

$80.00
$80.00

Cart totals

Subtotal $530.00
Shipping

Shipping to CA.

Tax $0.00
Total $530.00 USD