× |
|
Materials
-
Material:
Silicon
-
Diameter:
[755]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
>0.1
-
Thickness:
6"
-
Surface:
675
-
Grade:
SEMI notch Prime, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/G
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Thickness:
10.0 ±0.2µm
-
Surface:
1,500 ±50
-
Grade:
Prime,NO Flats, Polished side Ra<3µ rms, hard cst
-
Delivery Time:
15-30 days
|
$90.00 |
|
$90.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
100mm
-
Type:
P
-
Dopant:
Sb
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
.005-.02
-
Thickness:
450-500µm
-
Surface:
P/P
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
8-10
-
Thickness:
4"
-
Surface:
500
-
Grade:
SEMI Prime, 2Flats, Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ800-1,500
-
Thickness:
4"
-
Surface:
250
-
Grade:
SEMI, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ20,000-70,000
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 1Flat, TTV1,000µs, Back side Acid-Etched, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[221] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ>100
-
Thickness:
4"
-
Surface:
762
-
Grade:
Prime, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
|