× |
|
Materials
-
Material:
Silicon
-
Diameter:
[110] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.009-0.011
-
Thickness:
2"
-
Surface:
200
-
Grade:
SEMI Prime, 1Flat at ±1°, hard cst
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[331] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.001-0.002
-
Thickness:
4"
-
Surface:
475
-
Grade:
Prime, 1Flat, TTV<5µm, Bow/Warp<10µm, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111-8°towards[110]] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ NTD300-800 {517-529}
-
Thickness:
4"
-
Surface:
300
-
Grade:
SEMI Prime, 2Flats, TTV<5µm, MCC Lifetime=~1,390µs, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|