× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.01-0.02
-
Thickness:
3"
-
Surface:
350
-
Grade:
SEMI Prime, 2Flats, Empak cst
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ3.0-3.2
-
Thickness:
4"
-
Surface:
280
-
Grade:
PV SEMI Prime, 2Flats, TTV2,000µs{Measured 21,143µs},Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-100
-
Thickness:
6"
-
Surface:
1,910 ±10
-
Grade:
SEMI Prime, 1Flat (57.5mm), TTV<5µm, sealed in stacked trays of 1 & 3 wafer
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|