× |
|
Materials
-
Material:
Silicon
-
Diameter:
[753] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-100
-
Thickness:
4"
-
Surface:
300
-
Grade:
SEMI Prime, 1 Flat 32.5mm @ ,TTV<3µm,Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>10,000
-
Thickness:
6"
-
Surface:
1,000
-
Grade:
SEMI Prime,Notch,MCC Lifetime>1,400µs, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
76.2mm
-
Type:
P
-
Dopant:
As
-
Growth Method:
CZ
-
Orientations:
(100.00)
-
Resistivity:
.001-.005
-
Thickness:
350-400µm
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
25-30
-
Thickness:
6"
-
Surface:
3,093 ±50
-
Grade:
SEMI Prime, 1Flat (57.5mm), TTV<5µm,Groups of 2 + 10 wafers
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|