× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
BROKEN
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ4,000-8,000
-
Thickness:
3"
-
Surface:
380
-
Grade:
Broken P/E wafer, 1Flat, Soft cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
0.01-0.10
-
Thickness:
2"
-
Surface:
5,000
-
Grade:
SEMI Prime, 2Flats, Individual cst, Group of 3 wafers
-
Delivery Time:
15-30 days
|
$100.00 |
|
$100.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000
-
Thickness:
4"
-
Surface:
525
-
Grade:
SEMI Prime, 1Flat, MCC Lifetime>1,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Germanium
-
Diameter:
76.2mm
-
Type:
P
-
Dopant:
Sb
-
Growth Method:
CZ
-
Orientations:
(100)-6
-
Resistivity:
.01-.04
-
Thickness:
100-200µm
-
Surface:
P/E
-
Grade:
TEST
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
|