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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
Intrinsic Si:-
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Resistivity:
FZ>10,000 {22,000-26,000}
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Thickness:
2"
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Surface:
100 ±10
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Grade:
SEMI Prime, 1Flat, TTV<5µm, hard cst, Groups of 10 and 5 wafers
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Delivery Time:
15-30 days
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$100.00 |
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$100.00 |
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Materials
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Material:
Silicon
-
Diameter:
125mm
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Type:
P
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Dopant:
Phos
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Growth Method:
CZ
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Orientations:
(100)
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Resistivity:
1-50
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Thickness:
575-625µm
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Surface:
P/E/DTOx
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Grade:
PRIME
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Delivery Time:
15-30 days
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$100.00 |
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$100.00 |
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