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Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
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Type:
BROKEN
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
n-type Si:P
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Resistivity:
FZ4,000-8,000
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Thickness:
3"
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Surface:
380
-
Grade:
Broken P/E wafer, 1Flat, Soft cst
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Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
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Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
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Resistivity:
0.01-0.10
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Thickness:
2"
-
Surface:
5,000
-
Grade:
SEMI Prime, 2Flats, Individual cst, Group of 3 wafers
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Delivery Time:
15-30 days
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$100.00 |
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$100.00 |
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