Remove item Thumbnail image Product Price Quantity Subtotal
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    100mm
  • Type:

    P
  • Dopant:

    Phos
  • Growth Method:

    CZ
  • Orientations:

    (100.00)
  • Resistivity:

    1-50
  • Thickness:

    2900-3100µm
  • Surface:

    P/E
  • Grade:

    PRIME
  • Delivery Time:

    15-30 days
$100.00
$100.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    50.8mm
  • Type:

    P
  • Dopant:

    Phos
  • Growth Method:

    CZ
  • Orientations:

    (100.00)
  • Resistivity:

    1-50
  • Thickness:

    5900-6100µm
  • Surface:

    P/E
  • Grade:

    PRIME
  • Delivery Time:

    15-30 days
$100.00
$100.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    SiNOxP/EOxSiN
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    n-type Si:P
  • Resistivity:

    1-10
  • Thickness:

    3"
  • Surface:

    380
  • Grade:

    SEMI Prime, 1Flat, Wet Thermal Oxide 5µm ±5% thick over polished & etched sides, LPCVD Low Stress Silicon Nitride 350nm ±5% thick over Oxide on both sides, Empak cst
  • Delivery Time:

    15-30 days
$200.00
$200.00

Cart totals

Subtotal $400.00
Shipping

Shipping to CA.

Tax $0.00
Total $400.00 USD
Proceed to checkout