× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
8-12
-
Thickness:
4"
-
Surface:
3,000
-
Grade:
SEMI Prime, 2Flats, Individual cst (Sold in Packs of 5 wafers)
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Gallium Arsenide
-
Diameter:
150mm
-
Type:
Si
-
Dopant:
Undoped
-
Growth Method:
VGF
-
Orientations:
(100)
-
Resistivity:
>1E7
-
Thickness:
500-600µm
-
Surface:
P/P
-
Grade:
TEST
-
Delivery Time:
15-30 days
|
$250.00 |
|
$250.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[221] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ>100
-
Thickness:
4"
-
Surface:
762
-
Grade:
Prime, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-30
-
Thickness:
4"
-
Surface:
381
-
Grade:
SEMI Prime, 2Flats,TTV<5µm, Bow<10µm, Warp<30µm,Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-100
-
Thickness:
4"
-
Surface:
500
-
Grade:
SEMI Prime, 2Flats,TTV<1µm,Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111-4°] ±0.5°
-
Type:
P/EOx
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:As
-
Resistivity:
0.001-0.005
-
Thickness:
4"
-
Surface:
325
-
Grade:
SEMI Prime, 2Flats,Back-side Sand-blasted with LTO seal,in Empak cassettes (7 + 7 wafers)
-
Delivery Time:
15-30 days
|
$50.00 |
|
$50.00 |
|