× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100-6°towards[111]] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.01-0.02
-
Thickness:
6"
-
Surface:
675
-
Grade:
SEMITEST (scratched), 1Flat (57.5mm), in Unsealed Empak cst
-
Delivery Time:
15-30 days
|
$110.00 |
|
$110.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>20,000
-
Thickness:
4"
-
Surface:
500
-
Grade:
SEMI Prime, 1Flat, TTV1,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-100
-
Thickness:
6"
-
Surface:
2,950 ±50
-
Grade:
SEMI Prime, 1Flat (57.5mm), Sold as packs of 3 wafers
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
|