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× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    NP/PN
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    0.001-1.000
  • Thickness:

    2"
  • Surface:

    280
  • Grade:

    SEMI Prime, 2Flats, Both-sides-polished with LPCVD Si3N4 200±10nm thick on both sides, hard cst
  • Delivery Time:

    15-30 days
$100.00
$100.00
× Placeholder Materials
  • Material:

    Germanium
  • Type:

    P
  • Dopant:

    Ga
  • Growth Method:

    CZ
  • Orientations:

    (100)
  • Resistivity:

    .01-.04
  • Thickness:

    300-350µm
  • Surface:

    P/P
  • Grade:

    EPI
  • Delivery Time:

    15-30 days
$200.00
$200.00
× Placeholder Materials
  • Material:

    Indium Phosphide
  • Diameter:

    76.2mm
  • Type:

    P
  • Dopant:

    Si
  • Growth Method:

    VGF
  • Orientations:

    (100)
  • Thickness:

    600-650µm
  • Surface:

    P/E
  • Grade:

    PRIME
  • Delivery Time:

    15-30 days
$3,000.00
$3,000.00

Cart totals

Subtotal $3,300.00
Shipping

Shipping to CA.

Tax $0.00
Total $3,300.00 USD
Proceed to checkout