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Materials
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Material:
Silicon
-
Diameter:
[100]
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Type:
P/P
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Dopant:
Boron
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Growth Method:
CZ
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Orientations:
Intrinsic Si:-
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Resistivity:
FZ>50,000 {>167,000}
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Thickness:
2"
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Surface:
450
-
Grade:
SEMI Prime, 1Flat, MCC Lifetime>1,700µs, hard cst
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Delivery Time:
15-30 days
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$100.00 |
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$100.00 |
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Materials
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Material:
Indium Phosphide
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Diameter:
50.8mm
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Type:
P
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Dopant:
Zn
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Growth Method:
VGF
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Orientations:
(100)
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Thickness:
275-325µm
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Surface:
P/E
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Grade:
PRIME
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Delivery Time:
15-30 days
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$50.00 |
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$50.00 |
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