× |
|
Materials
-
Material:
Silicon
-
Diameter:
[112-5°towards[11-1]] ±0.5°
-
Type:
E/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ>100
-
Thickness:
4"
-
Surface:
795 ±10
-
Grade:
SEMI, 1Flat,TTV2,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>3,000
-
Thickness:
6"
-
Surface:
3,000
-
Grade:
Prime,NO Flats, MCC Lifetime>1,000µs, Individual cst in Groups of 5 wafers
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-100
-
Thickness:
6"
-
Surface:
1,910 ±10
-
Grade:
SEMI Prime, 1Flat (57.5mm), TTV<5µm, sealed in stacked trays of 1 & 3 wafer
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
0.025-0.035
-
Thickness:
4"
-
Surface:
235
-
Grade:
SEMI Prime, 1Flat, TTV<5µm, Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100-9°towards[001]]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
>10
-
Thickness:
32µm
-
Surface:
2,000 ±50
-
Grade:
Zero X-Ray Diffraction plate, with central sample pocket 5mmØ×200µm, NO Flats, Individual cst
-
Delivery Time:
15-30 days
|
$90.00 |
|
$90.00 |
|