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× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/E
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    n-type Si:P
  • Resistivity:

    0.01-0.10
  • Thickness:

    2"
  • Surface:

    5,000
  • Grade:

    SEMI Prime, 2Flats, Individual cst, Group of 3 wafers
  • Delivery Time:

    15-30 days
$100.00
$100.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    76.2mm
  • Type:

    P
  • Dopant:

    Phos
  • Growth Method:

    CZ
  • Orientations:

    (100)
  • Resistivity:

    1-20
  • Thickness:

    350-400µm
  • Surface:

    P/E/WTOx
  • Grade:

    PRIME
  • Delivery Time:

    15-30 days
$100.00
$100.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    n-type Si:P
  • Resistivity:

    0.7-1.3
  • Thickness:

    2"
  • Surface:

    178 ±8
  • Grade:

    SEMI Prime,2Flats (SF 90° CCW from PF), TTV<2.54µm,hard cst
  • Delivery Time:

    15-30 days
$100.00
$100.00

Cart totals

Subtotal $300.00
Shipping

Shipping to CA.

Tax $0.00
Total $300.00 USD
Proceed to checkout