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× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    1-20
  • Thickness:

    4"
  • Surface:

    525
  • Grade:

    SEMITEST (Spotted defect) - wafers with three layers of SiO2 and Ge deposited by Electron Beam Evaporation,2Flats, Empak cst
  • Delivery Time:

    15-30 days
$50.00
$50.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    76.2mm
  • Type:

    P
  • Dopant:

    Phos
  • Growth Method:

    CZ
  • Orientations:

    (111)
  • Resistivity:

    1-100
  • Thickness:

    4900-5100µm
  • Surface:

    P/E
  • Grade:

    PRIME
  • Delivery Time:

    15-30 days
$100.00
$100.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    n-type Si:P
  • Resistivity:

    1-5
  • Thickness:

    3"
  • Surface:

    381
  • Grade:

    SEMI Prime, 1Flat, TTV<5µm,Bow/Warp<10µm,Empak cst
  • Delivery Time:

    15-30 days
$130.00
$130.00

Cart totals

Subtotal $280.00
Shipping

Shipping to CA.

Tax $0.00
Total $280.00 USD
Proceed to checkout