× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-30
-
Thickness:
5"
-
Surface:
590
-
Grade:
SEMI Primewith Notch, TTV<1µm, Bow/Warp<10µm,Empak cst
-
Delivery Time:
15-30 days
|
$120.00 |
|
$120.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100] ±1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
8-12
-
Thickness:
12"
-
Surface:
775
-
Grade:
SEMI Prime, Notch, Backside LaserMark,TTV<3µm, Bow/Warp<40µm, Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
SiNOxP/EOxSiN
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
1-10
-
Thickness:
3"
-
Surface:
380
-
Grade:
SEMI Prime, 1Flat, Wet Thermal Oxide 5µm ±5% thick over polished & etched sides, LPCVD Low Stress Silicon Nitride 350nm ±5% thick over Oxide on both sides, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|