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× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [111] ±0.5°
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    n-type Si:P
  • Resistivity:

    1-100 {10-13}
  • Thickness:

    4"
  • Surface:

    750
  • Grade:

    SEMI Prime, 2Flats, TTV<5µm, Bow/Warp<10µm, Empak cst
  • Delivery Time:

    15-30 days
$80.00
$80.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [111] ±0.5°
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    n-type Si:P
  • Resistivity:

    FZ5,000-10,000
  • Thickness:

    4"
  • Surface:

    525
  • Grade:

    SEMI Prime, 2Flats, Empak cst
  • Delivery Time:

    15-30 days
$40.00
$40.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    0.01-0.02
  • Thickness:

    6"
  • Surface:

    1,450
  • Grade:

    SEMI Prime, 1Flat (57.5mm), TTV<5µm, Empak cst
  • Delivery Time:

    15-30 days
$200.00
$200.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [111-2.5°] ±1°
  • Type:

    NOP/EON
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    2-8
  • Thickness:

    4"
  • Surface:

    450
  • Grade:

    SEMI Prime, 1Flat,Both sides with 2µm SiO2, both sides with 250nm low stress silicon nitride over the oxide, Empak cst
  • Delivery Time:

    15-30 days
$150.00
$150.00
× Placeholder Materials
  • Material:

    Clean Room
  • Diameter:

    50.8mm
  • Type:

    Single Wafer Shipper
  • Dopant:

    ePak
  • Growth Method:

    Lid/Base/Spring
  • Resistivity:

    Holds1Wafer
  • Thickness:

    N/A
  • Surface:

    N/A
  • Grade:

    Clean
  • Delivery Time:

    15-30 days
$50.00
$50.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    5-35
  • Thickness:

    2"
  • Surface:

    762 ±12
  • Grade:

    SEMI Prime,NO Flats, TTV<1µm, Bow<2.5µm, Warp<4µm,hard cst,
  • Delivery Time:

    15-30 days
$100.00
$100.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    Intrinsic Si:-
  • Resistivity:

    FZ>20,000
  • Thickness:

    4"
  • Surface:

    325
  • Grade:

    SEMI Prime, 1Flat, MCC Lifetime>1,000µs, Empak cst
  • Delivery Time:

    15-30 days
$150.00
$150.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    0.001-0.005
  • Thickness:

    44×44µm
  • Surface:

    500
  • Grade:

    Silicon Frames:44mm square with 40mm square removed from center (drawing available on request)
  • Delivery Time:

    15-30 days
$100.00
$100.00
× Placeholder Materials
  • Material:

    Indium Phosphide
  • Diameter:

    76.2mm
  • Type:

    Si
  • Dopant:

    Fe
  • Growth Method:

    VGF
  • Orientations:

    (100)
  • Resistivity:

    5000000
  • Thickness:

    600-650µm
  • Surface:

    P/E
  • Grade:

    PRIME
  • Delivery Time:

    15-30 days
$250.00
$250.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/E
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    1-20
  • Thickness:

    4"
  • Surface:

    360
  • Grade:

    SEMI Prime, 1Flat, Empak cst
  • Delivery Time:

    15-30 days
$40.00
$40.00

Cart totals

Subtotal $1,160.00
Shipping

Shipping to CA.

Tax $0.00
Total $1,160.00 USD
Proceed to checkout