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× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [111-2.5°] ±1°
  • Type:

    NOP/EON
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    p-type Si:B
  • Resistivity:

    2-8
  • Thickness:

    4"
  • Surface:

    450
  • Grade:

    SEMI Prime, 1Flat,Both sides with 2µm SiO2, both sides with 250nm low stress silicon nitride over the oxide, Empak cst
  • Delivery Time:

    15-30 days
$150.00
$150.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    25.4mm
  • Type:

    P
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    (100)
  • Resistivity:

    1-20
  • Thickness:

    10-30µm
  • Surface:

    P/P
  • Grade:

    PRIME
  • Delivery Time:

    15-30 days
$100.00
$100.00
× Placeholder Materials
  • Material:

    Silicon
  • Diameter:

    [100]
  • Type:

    P/E
  • Dopant:

    Boron
  • Growth Method:

    CZ
  • Orientations:

    Intrinsic Si:-
  • Resistivity:

    FZ>20,000
  • Thickness:

    4"
  • Surface:

    500
  • Grade:

    SEMI Prime, 1Flat, TTV1,000µs, Back side Etched, Empak cst
  • Delivery Time:

    15-30 days
$80.00
$80.00

Cart totals

Subtotal $330.00
Shipping

Shipping to CA.

Tax $0.00
Total $330.00 USD
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