× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100-9.736°towards[111]] ±0.1°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ1-10
-
Thickness:
4"
-
Surface:
400 ±10
-
Grade:
SEMI Prime, 1Flat (57.5mm), TTV500µs, Empak cst
-
Delivery Time:
15-30 days
|
$150.00 |
|
$150.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-30
-
Thickness:
4"
-
Surface:
3,000
-
Grade:
SEMITEST (2 wafers with Chips, 1 wafer Scratched),2Flats, sold in pack of 3 wafers
-
Delivery Time:
15-30 days
|
$40.00 |
|
$40.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
5-10
-
Thickness:
4"
-
Surface:
275
-
Grade:
SEMI Prime, 2Flats, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[753] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
1-100
-
Thickness:
4"
-
Surface:
300 ±15
-
Grade:
SEMI Prime, 1 Flat 32.5mm @ ,TTV<3µm,Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
|