× |
|
Materials
-
Material:
Silicon
-
Diameter:
[771] ±0.3°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>1,000
-
Thickness:
4"
-
Surface:
300 ±15
-
Grade:
SEMI Prime, 1Flat at , TTV1,600µs, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ5,000-10,000
-
Thickness:
4"
-
Surface:
300
-
Grade:
SEMI Prime, 2Flats, TTV1,000µs, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
5-10
-
Thickness:
4"
-
Surface:
475
-
Grade:
SEMI 1Flat, Both sides polished (Front Prime and Epi-Ready, Back scratched),TTV<0.3µm,Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
|