× |
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Materials
-
Material:
Silicon
-
Diameter:
[100] ±0.3°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:Sb
-
Resistivity:
0.01-0.02
-
Thickness:
4"
-
Surface:
292.5±2.5
-
Grade:
SEMI Prime, 2Flats, TTV<5µm, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[511] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:Sb
-
Resistivity:
0.010-0.023
-
Thickness:
4"
-
Surface:
300 ±15
-
Grade:
Prime, 1Flat, TTV<5µm, Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|