× |
|
Materials
-
Material:
Silicon
-
Diameter:
[511] ±0.5°
-
Type:
P/E
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
p-type Si:B
-
Resistivity:
>10
-
Thickness:
48.25
-
Surface:
675
-
Grade:
Prime,NO Flats, hard cst
-
Delivery Time:
15-30 days
|
$120.00 |
|
$120.00 |
× |
|
Materials
-
Material:
Germanium
-
Diameter:
100mm
-
Dopant:
Undoped
-
Growth Method:
CZ
-
Orientations:
(100)
-
Resistivity:
>30
-
Thickness:
450-500µm
-
Surface:
P/P
-
Grade:
EPI
-
Delivery Time:
15-30 days
|
$250.00 |
|
$250.00 |
× |
|
Materials
-
Material:
Indium Phosphide
-
Diameter:
50.8mm
-
Type:
Si
-
Dopant:
Fe
-
Growth Method:
VGF
-
Orientations:
(100)
-
Resistivity:
5000000
-
Thickness:
325-375µm
-
Surface:
P/E
-
Grade:
PRIME
-
Delivery Time:
15-30 days
|
$250.00 |
|
$250.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ>100
-
Thickness:
4"
-
Surface:
300
-
Grade:
SEMI Prime, 2Flats, TTV200µs, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[111] ±0.5°
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
n-type Si:P
-
Resistivity:
FZ>5,000
-
Thickness:
4"
-
Surface:
300
-
Grade:
SEMI Prime, 1Flat, Empak cst
-
Delivery Time:
15-30 days
|
$80.00 |
|
$80.00 |
× |
|
Materials
-
Material:
Silicon
-
Diameter:
[100]
-
Type:
P/P
-
Dopant:
Boron
-
Growth Method:
CZ
-
Orientations:
Intrinsic Si:-
-
Resistivity:
FZ>10,000
-
Thickness:
6"
-
Surface:
675
-
Grade:
SEMI Prime, 1Flat (57.5mm), Empak cst
-
Delivery Time:
15-30 days
|
$200.00 |
|
$200.00 |
|